d a t a sh eet product data sheet supersedes data of 2002 jan 23 2004 aug 10 discrete semiconductors 1n4148; 1N4448 high-speed diodes m3d17 6
2004 aug 10 2 nxp semiconductors product data sheet high-speed diodes 1n4148; 1N4448 features ? hermetically sealed leaded glass sod27 (do-35) package ? high switching speed: max. 4 ns ? general application ? continuous reverse voltage: max. 100 v ? repetitive peak reverse voltage: max. 100 v ? repetitive peak forward current: max. 450 ma. applications ? high-speed switching. description the 1n4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass sod27 (do-35) packages. marking type number marking code 1n4148 1n4148ph or 4148ph 1N4448 1N4448 fig.1 simplified outline (sod27; do-35) and symbol. the diodes are type branded. handbook, halfpage mam246 k a ordering information type number package name description version 1n4148 ? hermetically sealed glass package; axial leaded; 2 leads sod27 1N4448
2004 aug 10 3 nxp semico nductors product data sheet high-speed diodes 1n4148; 1N4448 limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on an fr4 printed-circuit board; lead length 10 mm. symbol parameter conditions min. max. unit v rrm repetitive peak reverse voltage ? 100 v v r continuous reverse voltage ? 100 v i f continuous forward current see fig.2; note 1 ? 200 ma i frm repetitive peak forward current ? 450 ma i fsm non-repetitive peak forward current square wave; t j = 25 c prior to surge; see fig.4 t = 1 s ? 4 a t = 1 ms ? 1 a t = 1 s ? 0.5 a p tot total power dissipation t amb = 25 c; note 1 ? 500 mw t stg storage temperature ? 65 +200 c t j junction temperature ? 200 c electrical characteristics t j = 25 c unless otherwise specified. symbol parameter conditions min. max. unit v f forward voltage see fig.3 1n4148 i f = 10 ma ? 1 v 1N4448 i f = 5 ma 0.62 0.72 v i f = 100 ma ? 1 v i r reverse current v r = 20 v; see fig.5 25 na v r = 20 v; t j = 150 c; see fig.5 ? 50 a i r reverse current; 1N4448 v r = 20 v; t j = 100 c; see fig.5 ? 3 a c d diode capacitance f = 1 mhz; v r = 0 v; see fig.6 ? 4 pf t rr reverse recovery time when switched from i f = 10 ma to i r = 60 ma; r l = 100 ? ; measured at i r = 1 ma; see fig.7 ? 4 ns v fr forward recovery voltage when switched from i f = 50 ma; t r = 20 ns; see fig.8 ? 2.5 v thermal characteristics note 1. device mounted on a printed-circuit board without metallization pad. symbol parameter conditions value unit r th(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 k/w r th(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 k/w
2004 aug 10 4 nxp semico nductors product data sheet high-speed diodes 1n4148; 1N4448 graphical data 0 100 200 300 200 0 100 mbg451 t amb ( c) i f (ma) fig.2 maximum permissible continuous forward current as a function of ambient temperature. device mounted on an fr4 printed-circuit board; lead length 10 mm. fig.3 forward current as a function of forward voltage. handbook, halfpage 012 600 0 200 400 mbg464 v f (v) i f (ma) (1) (2) (3) (1) t j = 175 c; typical values. (2) t j = 25 c; typical values. (3) t j = 25 c; maximum values. fig.4 maximum permissible non-repetitive peak fo rward current as a function of pulse duration. based on square wave currents. t j = 25 c prior to surge. handbook, full pagewidth mbg704 10 t p ( s) 1 i fsm (a) 10 2 10 ? 1 10 4 10 2 10 3 10 1
2004 aug 10 5 nxp semico nductors product data sheet high-speed diodes 1n4148; 1N4448 0 100 t j ( c) 200 10 3 10 2 10 ? 1 10 ? 2 10 (1) 1 i r ( a) mgd290 (2) fig.5 reverse current as a function of junction temperature. (1) v r = 75 v; typical values. (2) v r = 20 v; typical values. fig.6 diode capacitance as a function of reverse voltage; typical values. f = 1 mhz; t j = 25 c. handbook, halfpage 01020 1.2 1.0 0.6 0.4 0.8 mgd004 v r (v) c d (pf)
2004 aug 10 6 nxp semico nductors product data sheet high-speed diodes 1n4148; 1N4448 fig.7 reverse recovery voltage test circuit and waveforms. handbook, full pagewidth t rr (1) i f t output signal t r t t p 10% 90% v r input signal v = v i x r rf s r = 50 s ? i f d.u.t. r = 50 i ? sampling oscilloscope mga881 (1) i r = 1 ma. fig.8 forward recovery voltage test circuit and waveforms. t r t t p 10% 90% i input signal r = 50 s ? i r = 50 i ? oscilloscope ? 1 k ? 450 d.u.t. mga882 v fr t output signal v
2004 aug 10 7 nxp semico nductors product data sheet high-speed diodes 1n4148; 1N4448 package outline references outline version european projection issue date iec jedec jeita note 1. the marking band indicates the cathode. sod27 do-35 a24 sc-40 97-06-09 05-12-22 hermetically sealed glass package; axial leaded; 2 leads sod2 7 unit b max. mm 0.56 d max. g 1 max. 25.4 4.25 1.85 l min. dimensions (mm are the original dimensions) g 1 l d l b (1) 0 1 2 mm scale
2004 aug 10 8 nxp semico nductors product data sheet high-speed diodes 1n4148; 1N4448 data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands r76/05/pp9 date of release: 2004 aug 10 document order number: 9397 750 13541
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